The effect of doping on the lattice parameter and properties of cubic boron nitride

TL;DR

This study investigates how doping cubic boron nitride with various elements affects its lattice structure, electrical properties, and spectra, revealing enhanced doping levels through specific synthesis methods and semiconductor behavior with silicon and beryllium.

Contribution

It demonstrates that synthesis conditions significantly influence doping levels and properties of cubic boron nitride, and identifies silicon and beryllium doping as inducing semiconductor characteristics.

Findings

Doping levels increase with supercritical ammonia synthesis.

Silicon and beryllium doping induce semiconductor properties.

Enhanced doping achieved compared to conventional melt synthesis.

Abstract

The effect of doping of cubic boron nitride with beryllium, silicon, sulfur and magnesium on the lattice parameters, electrical conductivity and EPR spectra has been studied. It is established that the degree of doping increases significantly in the case of crystallization of cubic boron nitride from BN solutions in supercritical ammonia at 3.9-4.2 GPa and 1100{\deg}C in comparison with the conventional synthesis from melts of the Mg-B-N system at 4.2 GPa and 1400{\deg}C. Doping with silicon and beryllium results in semiconductor properties of cubic boron nitride.