Fabrication of Ge2Sb2Te5 metasurfaces by direct laser writing technique

TL;DR

This paper presents a simple, rapid, and tunable method for fabricating high-contrast Ge2Sb2Te5 metasurfaces using direct laser writing, with improved accuracy on sapphire substrates, suitable for telecommunications and information processing.

Contribution

It introduces a novel direct laser writing technique for creating tunable Ge2Sb2Te5 metasurfaces with high precision and robustness, especially on sapphire substrates.

Findings

Sapphire substrates improve fabrication accuracy due to high thermal conductivity.

The method allows for rapid and robust fabrication of tunable metasurfaces.

The fabricated metasurfaces are suitable for telecommunications and information processing applications.

Abstract

We experimentally demonstrate fabrication of tunable high contrast periodic fishnet metasurfaces with 3 um period on 200 nm thick Ge2Sb2Te5 films sputted onto glass and sapphire substrates using direct laser writing technique. We find that the use of sapphire substrate provides better accuracy of metasurface segments due to high thermal conductivity. The advantages of the demonstrated method consist in its simplicity, rapidity, robustness, and the ability of tuning of fabricated structures. This is of crucial importance for the creation of robust and tunable metasurfaces for applications in the field of telecommunications and information processing.