Revealing trap depth distributions in persistent phosphors with a thermal barrier for charging
Ang Feng, Jonas J. Joos, Jiaren Du, Philippe F. Smet

TL;DR
This paper introduces a novel method to accurately extract trap depth distributions in persistent phosphors from thermoluminescence data, accounting for thermal barriers during charging, thereby improving understanding of their trapping behavior.
Contribution
The authors develop a new technique combining Tikhonov regularization and trap occupation analysis to better determine trap depth distributions in persistent phosphors with thermal charging barriers.
Findings
Enhanced precision in trap depth distribution extraction
Improved resolution over existing methods
Better understanding of trapping and detrapping mechanisms
Abstract
The performance of persistent phosphors under given charging and working conditions is determined by the properties of the traps that are responsible for these unique properties. Traps are characterized by the height of their associated barrier for thermal detrapping, and a continuous distribution of trap depths is often found in real materials. Accurately determining trap depth distributions is hence of importance for the understanding and development of persistent phosphors. However, extracting the trap depth distribution is often hindered by the presence of a thermal barrier for charging as well, which causes a temperature-dependent filling of traps. For this case, we propose a method for extracting the trap depth distribution from a set of thermoluminescence (TL) curves obtained at different charging temperatures. The TL curves are first transformed into electron population…
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