Gate-Based Circuit Designs For Quantum Adder Inspired Quantum Random Walks on Superconducting Qubits
Daniel Koch, Michael Samodurov, Andrew Projansky, Paul M. Alsing

TL;DR
This paper explores implementing Coin Quantum Random Walks on superconducting qubits using a quantum adder-based shift operator, analyzing circuit efficiency and demonstrating feasibility on IBM's NISQ device.
Contribution
It introduces a novel quantum circuit design for quantum walks with boundary conditions on superconducting qubits, including experimental fidelity results.
Findings
Circuit depth and gate count are manageable for current NISQ devices.
Boundary condition implementation is effective in 1D and 2D.
Quantum walks can be run with reasonable fidelity on IBM's quantum hardware.
Abstract
Quantum Random Walks, which have drawn much attention over the past few decades for their distinctly non-classical behavior, is a promising subfield within Quantum Computing. Theoretical framework and applications for these walks have seen many great mathematical advances, with experimental demonstrations now catching up. In this study, we examine the viability of implementing Coin Quantum Random Walks using a Quantum Adder based Shift Operator, with quantum circuit designs specifically for superconducting qubits. We focus on the strengths and weaknesses of these walks, particularly circuit depth, gate count, connectivity requirements, and scalability. We propose and analyze a novel approach to implementing boundary conditions for these walks, demonstrating the technique explicitly in one and two dimensions. And finally, we present several fidelity results from running our circuits on…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsQuantum Computing Algorithms and Architecture · Quantum and electron transport phenomena · Advancements in Semiconductor Devices and Circuit Design
