Single-electron spin resonance in a nanoelectronic device using a global field

TL;DR

This paper demonstrates a scalable method for controlling large arrays of silicon spin qubits using a single global microwave field generated by a 3D dielectric resonator, advancing quantum computing scalability.

Contribution

It introduces a novel approach employing a 3D dielectric resonator to broadcast a global microwave signal for spin control in silicon quantum devices, enabling large-scale qubit manipulation.

Findings

Global microwave control is feasible for silicon spin qubits.

Single-source microwave signals can perform spin resonance.

Scalable control could facilitate quantum processors with millions of qubits.

Abstract

Spin-based silicon quantum electronic circuits offer a scalable platform for quantum computation, combining the manufacturability of semiconductor devices with the long coherence times afforded by spins in silicon. Advancing from current few-qubit devices to silicon quantum processors with upwards of a million qubits, as required for fault-tolerant operation, presents several unique challenges, one of the most demanding being the ability to deliver microwave signals for large-scale qubit control. Here we demonstrate a potential solution to this problem by using a three-dimensional dielectric resonator to broadcast a global microwave signal across a quantum nanoelectronic circuit. Critically, this technique utilizes only a single microwave source and is capable of delivering control signals to millions of qubits simultaneously. We show that the global field can be used to perform spin resonance of single electrons confined in a silicon double quantum dot device, establishing the feasibility of this approach for scalable spin qubit control.