Photoluminescence from Single-Walled MoS$_2$ Nanotubes Coaxially Grown on Boron Nitride Nanotubes
Ming Liu, Kaoru Hisama, Yongjia Zheng, Mina Maruyama, Seungju Seo,, Anton Anisimov, Taiki Inoue, Esko I. Kauppinen, Susumu Okada, Shohei Chiashi,, Rong Xiang, and Shigeo Maruyama

TL;DR
This study demonstrates strong photoluminescence from single-walled MoS₂ nanotubes grown on boron nitride nanotubes, revealing a size-dependent transition to a direct band gap, and explores charge transfer effects with carbon nanotubes.
Contribution
It provides new insights into the optical properties of MoS₂ nanotubes and introduces a method for assembling heteronanotubes to study transition metal dichalcogenide nanotubes.
Findings
Single-walled MoS₂ nanotubes show strong PL indicating a direct band gap.
PL is quenched when SWCNTs are inside heteronanotubes due to charge transfer.
Multi-walled MoS₂ nanotubes do not emit light.
Abstract
Single- and multi-walled molybdenum disulfide (MoS) nanotubes have been coaxially grown on small diameter boron nitride nanotubes (BNNTs) which were synthesized from heteronanotubes by removing single-walled carbon nanotubes (SWCNTs), and systematically investigated by optical spectroscopy. The strong photoluminescence (PL) from single-walled MoS nanotubes supported by core BNNTs is observed in this work, which evidences a direct band gap structure for single-walled MoS nanotubes with around 6 - 7 nm in diameter. The observation is consistent with our DFT results that the single-walled MoS nanotube changes from an indirect-gap to a direct-gap semiconductor when the diameter of a nanotube is more than around 5 nm. On the other hand, when there are SWCNTs inside the heteronanotubes of BNNTs and MoS nanotubes, the PL signal is considerably quenched. The charge transfer…
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