A CMOS Compatible Aluminum Scandium Nitride-based Ferroelectric Tunnel Junction Memristor
Xiwen Liu, Jeffrey Zheng, Dixiong Wang, Pariasadat Musavigharavi, Eric, A. Stach, Roy Olsson III, Deep Jariwala
TL;DR
This paper introduces a CMOS-compatible ferroelectric tunnel junction memristor fabricated on silicon, utilizing scandium-doped aluminum nitride as the ferroelectric layer, advancing integration of memristors in semiconductor technology.
Contribution
It demonstrates the first direct growth of a ferroelectric tunnel junction memristor on silicon using scandium-doped aluminum nitride, compatible with CMOS processes.
Findings
Successful fabrication of the memristor on silicon substrate.
Use of scandium-doped aluminum nitride as ferroelectric layer.
Potential for integration into CMOS technology.
Abstract
We report a complementary metal oxide semiconductor (CMOS) technology compatible ferroelectric tunnel junction memristor grown directly on top of a Silicon substrate using a scandium doped aluminum nitride as the ferroelectric layer.
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Taxonomy
TopicsAdvanced Memory and Neural Computing · Semiconductor materials and devices · Ferroelectric and Negative Capacitance Devices