Strain-induced metallization and defect suppression at zipper-like interdigitated atomically thin interfaces enabling high-efficiency halide perovskite solar cells
Nikolai Tsvetkov, Byeong Cheul Moon, Jeung Ku Kang, Muhammad Ejaz, Khan, Yong-Hoon Kim

TL;DR
This paper demonstrates that creating a zipper-like interdigitated interface with a metallic layer via PbO capping significantly improves charge extraction and efficiency in halide perovskite solar cells.
Contribution
It introduces a novel interface engineering method using PbO capping to induce metallicity and defect passivation at the perovskite/ETL interface, enhancing solar cell performance.
Findings
Two-fold increase in charge extraction rate.
Highest photovoltaic efficiency at monolayer PbO capping.
Universal applicability to various ETL materials.
Abstract
Halide perovskite light absorbers have great advantages for photovoltaics such as efficient solar energy absorption, but charge accumulation and recombination at the interface with an electron transport layer (ETL) remains a major challenge in realizing their full potential. Here we report the experimental realization of a zipper-like interdigitated interface between a Pb-based halide perovskite light absorber and an oxide ETL by the PbO capping of the ETL surface, which produces an atomically thin two-dimensional metallic layer that can significantly enhance the perovskite/ETL charge extraction process. As the atomistic origin of the emergent two-dimensional interfacial metallicity, first-principles calculations performed on the representative MAPbI/TiO interface identify the interfacial strain induced by the simultaneous formation of stretched I-substitutional Pb bonds (and…
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