Robust Protection of III-V Nanowires in Water Splitting by a Thin Compact TiO$_2$ Layer
Fan Cui, Yunyan Zhang, H. Aruni Fonseka, Premrudee Promdet, Ali Imran, Channa, Mingqing Wang, Xueming Xia, Sanjayan Sathasivam, Hezhuang Liu, Ivan, P. Parkin, Hui Yang, Ting Li, Kwang-Leong Choy, Jiang Wu, Chris Blackman, Ana, M. Sanchez, and Huiyun Liu

TL;DR
This paper demonstrates that a thin TiO₂ layer can significantly enhance the durability and performance of III-V nanowires in water splitting, enabling long-term stability and higher photocurrent in solar water-splitting applications.
Contribution
The study introduces a novel, effective TiO₂ coating method that protects III-V nanowires from corrosion, significantly improving their stability and efficiency in water splitting.
Findings
TiO₂ layer maintains 91.4% photoluminescence after 14 months
Protected NWs show 45% higher photocurrent density
NWs exhibit no corrosion after 67 hours in acid electrolyte
Abstract
Narrow-bandgap III-V semiconductor nanowires (NWs) with a suitable band structure and strong light-trapping ability are ideal for high-efficiency low-cost solar water-splitting systems. However, due to their nanoscale dimension, they suffer more severe corrosion by the electrolyte solution than the thin-film counterparts. Thus, short-term durability is the major obstacle for using these NWs for practical water splitting applications. Here, we demonstrated for the first time that a thin layer (~7 nm thick) of compact TiO deposited by atomic layer deposition can provide robust protection to III-V NWs. The protected GaAs NWs maintain 91.4% of its photoluminescence intensity after 14 months of storage in ambient atmosphere, which suggests the TiO layer is pinhole-free. Working as a photocathode for water splitting, they exhibited a 45% larger photocurrent density compared with…
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Taxonomy
TopicsNanowire Synthesis and Applications · Electronic and Structural Properties of Oxides · Quantum Dots Synthesis And Properties
