Thermal stability of monolayer $WS_2$ in BEOL conditions
Simona Pace, Marzia Ferrera, Domenica Convertino, Giulia Piccinini,, Michele Magnozzi, Neeraj Mishra, Stiven Forti, Francesco Bisio, Maurizio, Canepa, Filippo Fabbri, Camilla Coletti

TL;DR
This study demonstrates that monolayer $WS_2$ remains thermally stable under typical BEOL processing conditions, supporting its integration into electronic devices without degradation.
Contribution
It provides comprehensive analysis of the thermal stability of monolayer $WS_2$ under BEOL conditions, including temperature, pressure, and exposure to electron beams and lasers.
Findings
$WS_2$ is stable at 300°C for up to 20 hours.
Low-current electron beams and low-fluence lasers do not degrade $WS_2$.
Higher laser fluences cause photo-activated degradation.
Abstract
Monolayer tungsten disulfide () has recently attracted large interest as a promising material for advanced electronic and optoelectronic devices such as photodetectors, modulators, and sensors. Since these devices can be integrated in a silicon (Si) chip via back-end-of-line (BEOL) processes, the stability of monolayer in BEOL fabrication conditions should be studied. In this work, the thermal stability of monolayer single-crystal at typical BEOL conditions is investigated; namely (i) heating temperature of , (ii) pressures in the medium- ( mbar) and high- ( mbar) vacuum range; (iii) heating times from minutes to hours. Structural, optical and chemical analyses of are performed via scanning electron microscopy (SEM), Raman spectroscopy, photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS). It is found…
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Taxonomy
Topics2D Materials and Applications · Chalcogenide Semiconductor Thin Films · Perovskite Materials and Applications
