Effect of Different Device Parameters on Tin Based Perovskite Solar Cell Coupled with In2S3 Electron Transport Layer and CuSCN and Spiro-OMeTAD Alternative Hole Transport Layers for High Efficiency Performance

TL;DR

This study uses SCAPS 1-D simulation to analyze how different device parameters and alternative hole transport layers affect the efficiency of lead-free tin-based perovskite solar cells, aiming for eco-friendly high performance.

Contribution

It introduces a simulation-based analysis of tin-based perovskite solar cells with In2S3 ETL and alternative HTLs, highlighting potential for high efficiency and environmental safety.

Findings

Achieved up to 19.32% efficiency with spiro-OMeTAD HTL.

Demonstrated the impact of device parameters on performance.

Compared effects of CuSCN and spiro-OMeTAD as HTLs.

Abstract

SCAPS 1-D was used for the simulation of lead-free environmentally benign methylammonium tin-iodide (CH3NH3SnI3) based solar cell. Indium sulphide (In2S3) was utilized as the electron transport layer (ETL) for its high carrier mobility and optimized band structure, unlike traditional titanium oxide (TiO2) ETL. Traditional expensive spiro-OMeTAD (C81H68N4O8) and cheaper cuprous thiocyanate (CuSCN) were utilized alternatively as hole transport layer (HTL) to observe the effect of different HTL on cell performance. We investigated the trend in electrical measurements by altering parameters such as thickness, defect density, valence band (VB) effective density of state and bandgap of the absorber layer, interfacial trap densities and defect density of ETL. At optimum condition, the device revealed the highest efficiency of 18.45% for CuSCN (HTL) and 19.32% for spiro-OMeTAD (HTL) configuration. The effect of working temperature, the wavelength of light and band-to-band radiative recombination rate was also observed for both configurations. All these simulation results will help to fabricate eco-friendly high-efficiency perovskite solar cell by replacing the commonly used toxic lead-based perovskite.