Multiwavelength electron diffraction as a tool for identifying stacking sequences in 2D materials

TL;DR

This paper introduces a multiwavelength electron diffraction technique to accurately identify stacking sequences in 2D materials, including complex multi-layer arrangements with A, B, and C layers, improving discrimination over existing methods.

Contribution

The authors develop a novel multiwavelength electron diffraction method that can distinguish complex stacking sequences in 2D materials, including those with C layers, and propose a faster way to calculate diffraction spot intensities.

Findings

Able to discriminate up to 6-layer stacking sequences

Valid for materials like MoS2 and graphene

Provides a faster, more accurate analysis of stacking sequences

Abstract

Two-dimensional (2D) materials are among the most studied ones nowadays, because of their unique properties. These materials are made of, single- or few atom-thick layers assembled by van der Waals forces, hence allowing a variety of stacking sequences possibly resulting in a variety of crystallographic structures as soon as the sequences are periodic. Taking the example of few layer graphene (FLG), it is of an utmost importance to identify both the number of layers and the stacking sequence, because of the driving role these parameters have on the properties. For this purpose, analysing the spot intensities of electron diffraction patterns (DPs) is commonly used, along with attempts to vary the number of layers, and the specimen tilt angle. However, the number of sequences able to be discriminated this way remains few, because of the similarities between the DPs. Also, the possibility of the occurrence of C layers in addition to A and/or B layers in FLG has been rarely considered. To overcome this limitation, we propose here a new methodology based on multi-wavelength electron diffraction which is able to discriminate between stacking sequences up to 6 layers (potentially more) involving A, B, and C layers. We also propose an innovative method to calculate the spot intensities in an easier and faster way than the standard ones. Additionally, we show that the method is valid for transition metal dichalcogenides, taking the example of MoS2.