A Low-Loss 1-4 GHz Optically-Controlled Silicon Plasma Switch

TL;DR

This paper introduces a silicon plasma RF switch operating between 1-4 GHz with exceptionally low insertion loss and high isolation, controlled optically with minimal power, suitable for advanced wireless applications.

Contribution

The paper presents the lowest-loss silicon plasma switch to date, demonstrating a novel optically-controlled design with superior RF performance across the L- and S-bands.

Findings

Insertion loss less than 0.33 dB in ON state

Isolation up to 27 dB at 1 GHz

Operates with only 1.5 W laser power

Abstract

This paper presents a low-loss optically-controlled inline RF switch suitable for L- and S-band applications. Under 1.5 W laser power, the switch exhibits a measured ON-state insertion loss of less than 0.33 dB and return loss better than 20 dB across the band. The measured OFF-state isolation ranges from 27 dB at 1 GHz to 17 dB at 4 GHz. The switch comprises a single silicon chiplet excited by a 915-nm laser fiber which creates electron-hole pairs, thereby exciting the ON-state silicon plasma. An optical fiber is guided through the bottom of the RF substrate to illuminate the chiplet, which bridges a 1.075-mm microstrip line gap. To the best of our knowledge, this is the lowest-loss silicon plasma switch demonstrated today.