Stress-controlled zero-field spin splitting in silicon carbide

TL;DR

This study demonstrates how static mechanical deformation influences zero-field spin splitting in silicon carbide, enabling precise control of spin transition energies for quantum applications.

Contribution

It provides the first measurement of the spin-deformation interaction constant in silicon carbide and proposes a method for on-demand tuning of spin states via deformation.

Findings

Significant change in zero-field splitting near heterointerface.

Measured spin-deformation interaction constants: 0.75 GHz and 0.5 GHz.

Deformation enables fine-tuning of spin transition energies.

Abstract

We report the influence of static mechanical deformation on the zero-field splitting of silicon vacancies in silicon carbide at room temperature. We use AlN/6H-SiC heterostructures deformed by growth conditions and monitor the stress distribution as a function of distance from the heterointerface with spatially-resolved confocal Raman spectroscopy. The zero-field splitting of the V1/V3 and V2 centers in 6H-SiC, measured by optically-detected magnetic resonance, reveal significant changes at the heterointerface compared to the bulk value. This approach allows unambiguous determination of the spin-deformation interaction constant, which turns out to be $0.75 \, \mathrm{GHz}$ for the V1/V3 centers and $0.5 \, \mathrm{GHz}$ for the V2 centers. Provided piezoelectricity of AlN, our results offer a strategy to realize the on-demand fine tuning of spin transition energies in SiC by deformation.