Random-gate-voltage induced Al'tshuler-Aronov-Spivak effect in topological edge states
Kun Luo, Wei Chen, Li Sheng, and D. Y. Xing

TL;DR
This paper proposes a method to distinguish topological helical edge states from trivial ones using a random-gate-voltage induced Aharonov-Aronov-Spivak oscillation, which is robust and does not require fine tuning.
Contribution
The study introduces a novel experimental signature based on $rac{ ext{Φ}_0}{2}$-period oscillations to identify helical edge states in quantum spin Hall insulators.
Findings
Helical edge states show $rac{ ext{Φ}_0}{2}$-period oscillations under random gate voltage.
Trivial edge states exhibit either weak localization or antilocalization with finite return probability.
The proposed signature is robust against disorder and does not need fine system adjustments.
Abstract
Helical edge states are the hallmark of the quantum spin Hall insulator. Recently, several experiments have observed transport signatures contributed by trivial edge states, making it difficult to distinguish between the topologically trivial and nontrivial phases. Here, we show that helical edge states can be identified by the random-gate-voltage induced -period oscillation of the averaged electron return probability in the interferometer constructed by the edge states. The random gate voltage can highlight the -period Al'tshuler-Aronov-Spivak oscillation proportional to by quenching the -period Aharonov-Bohm oscillation. It is found that the helical spin texture induced Berry phase is key to such weak antilocalization behavior with zero return probability at . In contrast, the oscillation for the trivial edge states…
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