MuPix10: First Results from the Final Design

TL;DR

MuPix10 is a fully monolithic HV-CMOS pixel sensor designed for the Mu3e experiment, featuring high-speed serial readout, minimal electrical connections, and suitability for ultra-thin modules, with initial lab and testbeam results demonstrating its performance.

Contribution

This paper presents the final design and first results of MuPix10, a novel monolithic HV-CMOS pixel sensor optimized for ultra-thin particle detection modules.

Findings

Successful lab characterization of MuPix10.

Testbeam results demonstrate sensor performance.

Minimal electrical connections enable ultra-thin module construction.

Abstract

Many years of research and development of High Voltage Monolithic Active Pixel Sensors (HVMAPS) have culminated in the final design for the Mu3e pixel sensor. MuPix10 is a fully monolithic sensor with an active pixel matrix size of $20\times20\,\mathrm{mm}^2$ produced in the $180\,\mathrm{nm}$ HV-CMOS process at TSI Semiconductors. The pixel size is $80\times80\,\mathrm{\mu m}^2$. Hits are read out using a column-drain architecture and sent over up to four serial links with up to $1.6\,\left.\mathrm{Gbit}\middle/\mathrm{s}\right.$ each. By means of DC/DC converters and exclusive usage of on-chip biasing, MuPix10 is fully operable with a minimal set of electrical connections. This is an integral requirement by the Mu3e experiment since it enables the construction of ultra-thin pixel modules with $0.1\,$% of a radiation length per layer. First results from lab characterisation and testbeam campaigns are presented.