Electron-hole superfluidity in strained Si/Ge type II heterojunctions
Sara Conti, Samira Saberi Pouya, Andrea Perali, Michele Virgilio,, Francois M. Peeters, Alexander R. Hamilton, Giordano Scappucci, David, Neilson

TL;DR
This paper predicts that strained Si/Ge heterojunctions can host observable electron-hole superfluidity and Bose-Einstein Condensation at accessible temperatures, leveraging their unique bandstructure and fabrication advantages.
Contribution
It introduces a novel material platform using strained Si/Ge bilayers for superfluidity, enabling device fabrication without insulating barriers and predicting superfluidity at practical conditions.
Findings
Superfluidity predicted at a few Kelvin.
Carrier densities up to ~6×10^{10} cm^{-2} are feasible.
Large mass imbalance may lead to exotic superfluid phases.
Abstract
Excitons are promising candidates for generating superfluidity and Bose-Einstein Condensation (BEC) in solid state devices, but an enabling material platform with in-built bandstructure advantages and scaling compatibility with industrial semiconductor technology is lacking. Here we predict that spatially indirect excitons in a lattice-matched strained Si/Ge bilayer embedded into a germanium-rich SiGe crystal, would lead to observable mass-imbalanced electron-hole superfluidity and BEC. Holes would be confined in a compressively strained Ge quantum well and electrons in a lattice-matched tensile strained Si quantum well. We envision a device architecture that does not require an insulating barrier at the Si/Ge interface, since this interface offers a type II band alignment. Thus the electrons and holes can be kept very close but strictly separate, strengthening the electron-hole pairing…
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