Importance of Electronic Correlation in the Intermetallic Half-Heusler Compounds

TL;DR

This study investigates electronic correlations in intermetallic Half-Heusler compounds, revealing diverse zero bias anomalies and demonstrating that correlations are a bulk property through tunneling spectroscopy and magnetoresistance analysis.

Contribution

It provides new experimental evidence of electronic correlations in Half-Heusler compounds and distinguishes bulk effects from surface phenomena.

Findings

HfNiSn shows a fractional power law zero bias anomaly.

Different compounds exhibit varied local density of states anomalies.

Electron-electron scattering dominates at low temperatures in HfNiSn.

Abstract

Low temperature scanning tunneling spectroscopy of HfNiSn shows a V^m(m < 1) zero bias anomaly around the Fermi level. This local density of states with a fractional power law shape is well known to be a consequence of electronic correlations. For comparison, we have also measured the tunneling conductances of other half-Heusler compounds with 18 valence electrons. ZrNiPb shows a metal-like local density of states, whereas ZrCoSb and NbFeSb show a linear and V^2 anomaly. One interpretation of these anomalies is that a correlation gap is opening in these compounds. By analyzing the magnetoresistance of HfNiSn, we demonstrate that at low temperatures, electron-electron scattering dominates. The T^m(m < 1) temperature dependence of the conductivity confirms that the electronic correlations are a bulk rather than a surface property.