Gate voltage dependence of noise distribution in radio-frequency reflectometry in gallium arsenide quantum dots

TL;DR

This paper studies how gate voltage affects noise in high-speed rf reflectometry of gallium arsenide quantum dots, revealing how different noise sources dominate depending on measurement conditions.

Contribution

It provides a detailed analysis of gate voltage dependence of flicker noise and distinguishes between device and circuit noise components in quantum dot readout.

Findings

Flicker noise varies with gate voltage.

Dominant noise source shifts with measurement integration time.

Noise spectral components can be separated through model analysis.

Abstract

We investigate gate voltage dependence of electrical readout noise in high-speed rf reflectometry using gallium arsenide quantum dots. The fast Fourier transform spectrum from the real time measurement reflects build-in device noise and circuit noise including the resonator and the amplifier. We separate their noise spectral components by model analysis. Detail of gate voltage dependence of the flicker noise is investigated and compared to the charge sensor sensitivity. We point out that the dominant component of the readout noise changes by the measurement integration time.