Weak Anti-localization in thin films of the Topological Semimetal Candidate Pd$_{3}$Bi$_{2}$S$_{2}$

TL;DR

This study investigates the weak anti-localization effect in Pd3Bi2S2 thin films, revealing complex charge carrier behavior and phase relaxation mechanisms involving electron-electron and electron-phonon interactions.

Contribution

First demonstration of WAL in Pd3Bi2S2 thin films and analysis of phase relaxation mechanisms using HLN theory.

Findings

Presence of multiple charge carriers with high concentration.

Observation of WAL at low temperatures.

Electron-phonon scattering influences phase relaxation.

Abstract

We report the growth and magneto-transport studies of Pd$_{3}$Bi$_{2}$S$_{2}$ (PBS) thin films synthesized by pulsed laser deposition (PLD) technique. The magneto-transport study on pristine and post annealed films show the presence of more than one type of charge carrier with a carrier concentration in the range $0.6$ - $2.26~\times$ 10$^{21}$ cm$^{-3}$ and mobility in the range 0.96 - 1.73 $\times$ 10$^{2}$ cm$^{2}$/Vs. At low temperatures a logarithmic increase in conductivity is observed which indicates the presence of weak anti-localization (WAL). The magnetotransport data is analysed within the Hikami-Larkin-Nagaoka (HLN) theory. It is found that temperature dependence of the dephasing length can't be explained only by electron-electron scattering and that electron-phonon scattering also contributes to the phase relaxation mechanism in PBS films.