ReS2/h-BN/Graphene Heterostructure Based Multifunctional Devices: Tunnelling Diodes, FETs, Logic Gates & Memory

TL;DR

This paper explores a 2D heterostructure of ReS2, h-BN, and graphene, demonstrating its potential for multifunctional electronic devices such as tunnel diodes, FETs, logic gates, and memory, with promising electrical characteristics.

Contribution

It introduces a novel 2D heterostructure device platform with multifunctional capabilities and detailed electrical performance analysis.

Findings

ReS2/h-BN/graphene tunnel diodes show light-tunable rectification.

Devices operate effectively as MIS-type tunnel diodes for logic applications.

Heterostructures function as low-threshold FETs and large-memory devices.

Abstract

We investigate a two-dimensional (2D) heterostructure consisting of few-layer direct bandgap ReS2, a thin h-BN layer and a monolayer graphene for application to various electronic devices. Metal-insulator-semiconductor (MIS)-type devices with two-dimensional (2D) van-der-Waals (vdW) heterostructures have recently been studied as important components to realize various multifunctional device applications in analogue and digital electronics. The tunnel diodes of ReS2/h-BN/graphene exhibit light tuneable rectifying behaviours with low ideality factors and nearly temperature independent electrical characteristics. The devices behave like conventional MIS-type tunnel diodes for logic gate applications. Furthermore, similar vertical heterostructures are shown to operate in field effect transistors with a low threshold voltage and a memory device with a large memory gate for future multifunctional device applications.