Quantum photonics in triangular-cross-section nanodevices in silicon carbide

TL;DR

This paper models and analyzes triangular-cross-section silicon carbide nanodevices for quantum photonics, focusing on optimizing color center placement, Purcell enhancement, and emitter-cavity interactions for quantum information applications.

Contribution

It introduces detailed modeling of nanophotonic structures in SiC and explores quantum emitter interactions, advancing the design of integrated quantum photonic devices.

Findings

Optimal color center positioning enhances device performance.

Achievable Purcell factors indicate strong light-matter coupling.

Observation of polariton and subradiant states in cavity regimes.

Abstract

Silicon carbide is evolving as a prominent solid-state platform for the realization of quantum information processing hardware. Angle-etched nanodevices are emerging as a solution to photonic integration in bulk substrates where color centers are best defined. We model triangular cross-section waveguides and photonic crystal cavities using Finite-Difference Time-Domain and Finite-Difference Eigensolver approaches. We analyze optimal color center positioning within the modes of these devices and provide estimates on achievable Purcell enhancement in nanocavities with applications in quantum communications. Using open quantum system modeling, we explore emitter-cavity interactions of multiple non-identical color centers coupled to both a single cavity and a photonic crystal molecule in SiC. We observe polariton and subradiant state formation in the cavity-protected regime of cavity quantum electrodynamics applicable in quantum simulation.