Mechanical Properties of Au Coated Si Nanowafer: an Atomistic Study

TL;DR

This study investigates the mechanical properties of gold-coated silicon nanowafers through molecular dynamics simulations, revealing how temperature, coating thickness, strain rate, and orientation influence failure modes and crystal transformations.

Contribution

It provides a detailed atomistic analysis of how various factors affect the mechanical behavior and failure mechanisms of gold-coated silicon nanowafers, including novel observations of crystal transformations.

Findings

Strength decreases with temperature.

Failure occurs via slip along {110} planes and mixed failure modes.

Crystallographic transformations observed in gold and silicon layers.

Abstract

Combined gold and silicon nano-system has spurred tremendous interest in the scientific community due to its application in different metal-semiconductor electronic devices and solar driven water splitting cells. Silicon, fabricated on gold layer, is prone to gold atom diffusion at its surface. In this study, detailed analysis of mechanical properties of gold coated silicon nanowafer is studied by performing molecular dynamics tensile and compressive simulations. The effects of temperature, gold coating thickness, strain rate and crystallographic orientation of silicon on the mechanical properties are observed for the nanowafer. It is found that both the ultimate tensile and compressive strength show inverse relationship with temperature. The nanowafer fails mainly by slipping along {110} plane due to excessive shear when loaded in [100] direction while a mixed slip and crack type failure occurs for 300K. Interesting crystallographic transformation from fcc to hcp crystal is observed in gold layer for the highest gold layer thickness during tension. The effects of strain rate in tension and compression is also studied. Finally, the crystal orientation of silicon is varied and the tension-compression asymmetry inn the gold coated silicon nanowafer is investigated. Reverse tension-compression asymmetry is observed in case of loading along [110] crystal orientation. The failure mechanism reveals that interesting crystal transformation of silicon occurs during compression leading to early yielding of the material.