Understanding interface properties in 2D heterostructure FETs

TL;DR

This review discusses the properties of interfaces in 2D heterostructure FETs, comparing them to traditional interfaces and highlighting recent advances and challenges in gate stack engineering for 2D materials.

Contribution

It provides a comprehensive overview of 2D/SiO2 interface properties and recent progress in gate stack development for bilayer graphene and MoS2 FETs.

Findings

2D/SiO2 interfaces differ from conventional SiO2/Si interfaces.

Recent advances include improved understanding of 2D heterostructure interfaces.

Challenges remain in controlling and optimizing 2D heterointerface properties.

Abstract

Fifteen years have passed since graphene was first isolated on the substrate from bulk graphite. During that period, 2D layered materials with intrinsic band gaps have been realized. Although many exciting results have been reported for both their fundamental physics and applications, the discussion of 2D electron device application to the future integrated circuit is still based on the expectation of the inherently high properties that 2D materials ideally possess. This review article focuses on the gate stack property, which is one of most important building blocks in the field effect transistor. Starting from the comparison of the 2D/SiO2 interface properties with the conventional SiO2/Si interface properties, recent advances in the studies of gate stack properties for bilayer graphene and MoS2 FETs are discussed. In particular, the advantages and disadvantages of the 2D heterostructures with 2D insulator of h-BN are emphasized. This review may provide conceptual and experimental approaches for controlling the 2D heterointerface properties.