Microscopic analysis of high harmonic generation in semiconductors with degenerate bands
Le Huu Thong, Cong Ngo, Huynh Thanh Duc, Xiaohong Song, and Torsten, Meier

TL;DR
This paper introduces a microscopic approach using multiband semiconductor Bloch equations to accurately model high-harmonic generation in semiconductors with degenerate bands, addressing phase ambiguities and band crossing issues.
Contribution
It develops a length gauge method with smooth gauge transformation to handle degenerate bands, validated against velocity gauge calculations, improving computational efficiency and physical interpretability.
Findings
High-harmonic spectra match experimental data for GaAs.
Berry curvature influences even-order harmonics polarization.
Length gauge requires fewer bands and less computation.
Abstract
Based on the multiband semiconductor Bloch equations a microscopic approach to high-harmonic generation in crystalline solids which is able to properly describe degenerate bands and band crossings is presented and analyzed. It is well-known that numerical band structure calculations typically provide electronic wave functions with an undetermined k-dependent phase which results in matrix elements which contain arbitrary k-dependent phases. In addition, such approaches usually mix degenerate bands and bands with an energy difference smaller than the numerical precision in an arbitrary way for each point in k-space. These ambiguities are problematic if one considers the dynamics induced by electric fields since the matrix elements of the position operator involve a derivative of the wave functions with respect to k. When the light-matter interaction is described in the length gauge, the…
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