Instrument for in situ hard x-ray nanobeam characterization during epitaxial crystallization and materials transformations
Samuel D. Marks, Peiyu Quan, Rui Liu, Matthew J. Highland, Hua Zhou,, Thomas F. Keuch, G. Brian Stephenson, and Paul G. Evans

TL;DR
This paper presents an in situ synchrotron hard x-ray instrument designed for nanoscale structural and chemical characterization during epitaxial crystallization and materials transformations, enabling real-time analysis of dynamic processes.
Contribution
The paper introduces a novel in situ x-ray characterization instrument with integrated deposition capabilities for real-time nanoscale studies during epitaxial crystallization.
Findings
Successful implementation of the instrument for in situ analysis.
Real-time observation of amorphous thin film deposition.
Enhanced understanding of crystallization processes.
Abstract
Solid-phase epitaxy (SPE) and other three-dimensional epitaxial crystallization processes pose challenging structural and chemical characterization problems. The concentration of defects, the spatial distribution of elastic strain, and the chemical state of ions each vary with nanoscale characteristic length scales and depend sensitively on the gas environment and elastic boundary conditions during growth. The lateral or three-dimensional propagation of crystalline interfaces in SPE has nanoscale or submicron characteristic distances during typical crystallization times. An in situ synchrotron hard x-ray instrument allows these features to be studied during deposition and crystallization using diffraction, resonant scattering, nanobeam and coherent diffraction imaging, and reflectivity. The instrument incorporates a compact deposition system allowing the use of short-working-distance…
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Taxonomy
TopicsSemiconductor materials and devices · Electronic and Structural Properties of Oxides · Ion-surface interactions and analysis
