High Temperature Quantum Kinetic Effect in Silicon Nanosandwiches

TL;DR

This paper reports the observation of high-temperature quantum kinetic effects, including quantum Hall and de Haas-van Alphen phenomena, in silicon nanosandwich structures with ultra-narrow quantum wells, enabled by negative-U impurity stripes.

Contribution

It presents the first experimental evidence of quantum kinetic effects at near-room temperatures in silicon quantum wells with negative-U impurity stripes.

Findings

Observation of quantum Hall effect at 77K

Detection of de Haas-van Alphen effect at 300K

Quantum conductance staircase in silicon nanosandwich

Abstract

The negative-U impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent transport, with the reduction of the electron-electron interaction. The aforesaid promotes also the creation of composite bosons and fermions by the capture of single magnetic flux quanta on the edge channels under the conditions of low sheet density of carriers, thus opening new opportunities for the registration of the quantum kinetic phenomena in weak magnetic fields at high temperatures up to the room temperature. As a certain version noted above we present the first findings of the high temperature de Haas-van Alphen, 300K, quantum Hall, 77K, effects as well as quantum conductance staircase in the silicon sandwich structure that represents the ultra-narrow, 2 nm, p-type quantum well (Si-QW) confined by the delta barriers heavily doped with boron on the n-type Si (100) surface.