Design and analysis of electro-optic modulators based on high contrast gratings (HCGs) in AlGaN/GaN heterostructures
Pallabi Das, Shlok Vaibhav Singh, Siddharth Tallur

TL;DR
This paper introduces a novel high contrast grating (HCG) based electro-optic modulator design embedding a HEMT to enhance 2DEG-light interaction, achieving significant reflectivity change and robustness against fabrication variations.
Contribution
It proposes a new HCG-embedded HEMT modulator design with an analytical model and demonstrates high reflectivity modulation suitable for high-efficiency devices.
Findings
Achieved up to 70% change in reflectivity at C- and L-band wavelengths.
Developed an extended analytical model matching rigorous coupled-wave analysis.
Demonstrated low sensitivity to fabrication imperfections.
Abstract
Recently High Electron Mobility Transistor (HEMT) inspired III-V electro-optic modulator topologies were proposed for realizing high speed electro-optic modulators leveraging plasma dispersion effect due to the 2D Electron Gas (2DEG) present at the III-V heterostructure interface. The 2DEG is highly confined at the interface, extending to very low depths in the bulk (10nm) and therefore has limited spatial overlap with the optical mode. In this paper, we propose a novel modulator design to boost the 2DEG-light interaction, wherein the HEMT is embedded within a high contrast grating (HCG) mirror. We present an analytical model extending the conventional HCG model to multi-layer structures and observe good agreement with rigorous coupled-wave analysis (RCWA). We explore the design space for identifying optimal device topology and present geometries that produce a change in…
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