Roadmap for gallium arsenide spin qubits

TL;DR

This paper provides a comprehensive roadmap for gallium arsenide (GaAs) spin qubits, highlighting their fabrication, properties, and applications in quantum information processing despite emerging interest in other materials.

Contribution

It offers a detailed overview of GaAs spin qubits, emphasizing their advantages, current research directions, and potential future roles in quantum computing.

Findings

GaAs spin qubits are easy to produce and study in labs.

They have favorable electronic properties like a single conduction band valley.

GaAs devices remain important for proof-of-concept quantum experiments.

Abstract

Gate-defined quantum dots in gallium arsenide (GaAs) have been used extensively for pioneering spin qubit devices due to the relative simplicity of fabrication and favourable electronic properties such as a single conduction band valley, a small effective mass, and stable dopants. GaAs spin qubits are readily produced in many labs and are currently studied for various applications, including entanglement, quantum non-demolition measurements, automatic tuning, multi-dot arrays, coherent exchange coupling, and teleportation. Even while much attention is shifting to other materials, GaAs devices will likely remain a workhorse for proof-of-concept quantum information processing and solid-state experiments.