Large-Signal and High--Frequency Analysis of Nonuniformly Doped or Shaped PN-Junction Diodes

TL;DR

This paper develops an analytical model for non-uniformly doped or shaped PN-junction diodes under large signals at high frequencies, providing formulas for device performance evaluation.

Contribution

It introduces a quasi-one-dimensional analytical theory using transverse averaging for non-uniform PN-junction diodes under large signals and high frequencies.

Findings

Provides explicit expressions for static I-V characteristics.

Derives formulas for diffusion conductance and capacitance.

Enables performance evaluation of semiconductor device models.

Abstract

An analytical theory of non-uniformly doped or shaped PN-junction diodes submitted to large-signals at high frequencies is presented. The resulting expressions can be useful to evaluate the performance of semiconductor device modeling software. The transverse averaging technique is employed to reduce the three-dimensional charge carrier transport equations into the quasi-one-dimensional form, with all physical quantities averaged out over the longitudinally-varying cross section. Although, it is assumed an axial symmetry, this approach gives rise to useful analytic expressions for the static current--voltage characteristics, the diffusion conductance, and diffusion capacitance as a function of the signal amplitude and the cross section non-uniformity.