Measurement of $p\!-\!n$-junction diode behavior under large signal and high frequency

TL;DR

This paper experimentally investigates the dynamic conductance and capacitance of p-n junction diodes at high frequencies and voltages, confirming theoretical models and enabling parameter extraction for device characterization.

Contribution

It extends conventional p-n junction theory to high-frequency, large-signal conditions and validates it through precise impedance measurements.

Findings

Experimental confirmation of spectral charge transport theory.

Ability to extract device parameters like relaxation time and injection coefficient.

Validation of theoretical models at frequencies up to 10 times the inverse carrier lifetime.

Abstract

Measurements of diode dynamic conductance and dynamic capacitance for frequencies up to $10 \times \tau_{p,n}^{-1}$, and voltage amplitude level up tp 100 mV was carried out with a precision impedancemeter. The results were compared with the theoretical expressions obtained with the spectral approach to the charge carrier transport in $p\!-\!n$-junctions. This experimental confirmation is of practical interest, as one can use the theory to extract device parameters, such as: relaxation time $\tau_{p,n}$, and junction injection coefficient. These experiments were carried to test the extension of the conventional $p\!-\!n$-junction theory.