The influence of growth interruption on the luminescence properties of Ga(As,Sb)-based type II heterostructures

TL;DR

This study investigates how growth interruption affects the luminescence of Ga(As,Sb)/GaAs heterostructures, revealing optimal conditions for high quantum efficiency using specific growth interruption techniques.

Contribution

It demonstrates that a 10-second growth interruption with precursor stabilization significantly enhances luminescence efficiency in Ga(As,Sb)/GaAs structures.

Findings

Maximum luminescence quantum efficiency achieved with 10s growth interruption.

Atomic force microscopy reveals interface morphology changes due to growth interruption.

Type II charge transfer recombination used as a sensitive probe.

Abstract

The influence of growth interruption on the luminescence properties of the Ga(As,Sb)/GaAs interface have been studied by continous wave and time resolved photoluminescence spectrosocopy in type II Ga(As,Sb)/GaAs/(Ga,In)As double quantum well structures. A specific highly selective etching technique in combination with atomic force microscopy (AFM) is used to analyse the morphology of the Ga(As,Sb) interface layers. The type II charge transfer recombination has been used as sensitive probe. It was found, that highest luminescence quantum efficiency can be achieved using a 10s growth interruption applying a stabilization using both precursor sources for the anion sublattice.