Moir\'{e} effects in graphene--hBN heterostructures

TL;DR

This paper investigates moiré effects in graphene-hBN heterostructures, demonstrating that accurate modeling of these effects is crucial for understanding their electronic properties and aligning theoretical results with experimental data.

Contribution

It introduces a new model for band structure and magnetotransport calculations that captures moiré physics in graphene-hBN systems, including disordered and twisted structures.

Findings

Excellent agreement with experimental data achieved

Moiré physics is essential for accurate device modeling

Model applies to complex structures like antidot lattices

Abstract

Encapsulating graphene in hexagonal Boron Nitride has several advantages: the highest mobilities reported to date are achieved in this way, and precise nanostructuring of graphene becomes feasible through the protective hBN layers. Nevertheless, subtle effects may arise due to the differing lattice constants of graphene and hBN, and due to the twist angle between the graphene and hBN lattices. Here, we use a recently developed model which allows us to perform band structure and magnetotransport calculations of such structures, and show that with a proper account of the moir\'e physics an excellent agreement with experiments can be achieved, even for complicated structures such as disordered graphene, or antidot lattices on a monolayer hBN with a relative twist angle. Calculations of this kind are essential to a quantitative modeling of twistronic devices.