Electrochemical Ion Insertion: From Atoms to Devices

TL;DR

This review presents a unified framework for understanding electrochemical ion insertion across various materials and devices, highlighting recent advances in characterization and simulation that deepen insight into ion-insertion phenomena.

Contribution

It introduces a comprehensive, cross-disciplinary framework for ion-insertion processes, integrating atomic to device-level understanding and recent technological developments.

Findings

Commonalities in defect and phase behavior across materials

Unified principles in diverse ion-insertion devices

Advances in operando and high-resolution characterization methods

Abstract

Electrochemical ion insertion involves coupled ion-electron transfer reactions, transport of guest species, and redox of the host. The hosts are typically anisotropic solids with two-dimensional conduction planes, but can also be materials with one-dimensional or isotropic transport pathways. These insertion compounds have traditionally been studied in the context of energy storage, but also find extensive applications in electrocatalysis, optoelectronics, and computing. Recent developments in operando, ultrafast, and high-resolution characterization methods, as well as accurate theoretical simulation methods, have led to a renaissance in the understanding of ion-insertion compounds. In this Review, we present a unified framework for understanding insertion compounds across time and length scales ranging from atomic to device levels. Using graphite, transition metal dichalcogenides, layered oxides, oxyhydroxides, and olivines as examples, we explore commonalities in these materials in terms of point defects, interfacial reactions, and phase transformations. We illustrate similarities in the operating principles of various ion-insertion devices ranging from batteries and electrocatalysts to electrochromics and thermal transistors, with the goal of unifying research across disciplinary boundaries.