Inverse problems for semiconductors: models and methods
A. Leitao, P.A. Markowich, J.P. Zubelli
TL;DR
This paper addresses inverse problems in semiconductor modeling, focusing on identifying doping profiles from voltage-current data using level set methods in both stationary and transient scenarios.
Contribution
It introduces a unified framework for inverse problems in semiconductors and demonstrates the effectiveness of level set approaches through numerical implementations.
Findings
Level set methods effectively recover doping profiles.
Framework applies to stationary and transient models.
Numerical results validate the approach.
Abstract
We consider the problem of identifying discontinuous doping profiles in semiconductor devices from data obtained by different models connected to the voltage-current map. Stationary as well as transient settings are discussed and a framework for the corresponding inverse problems is established. Numerical implementations for the so-called stationary unipolar and stationary bipolar cases show the effectiveness of a level set approach to tackle the inverse problem.
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