Growth of germanium-silver surface alloys followed by in situ scanning tunneling microscopy: Absence of germanene formation
Kai Zhang (INSP-E6), Romain Bernard (INSP-E6), Yves Borensztein (INSP,, INSP-E6), Herv\'e Cruguel (INSP-E6), Geoffroy Pr\'evot (INSP-E6)

TL;DR
This study uses in situ STM to investigate germanium deposition on Ag(111), revealing surface alloy formation without evidence of germanene, highlighting atomic exchange processes at elevated temperatures.
Contribution
It provides real-time STM evidence that germanene does not form on Ag(111) under certain conditions, emphasizing alloying mechanisms.
Findings
Ag atoms participate in surface alloy formation
Germanene formation is absent under studied conditions
Atomic exchange between Ge and Ag drives alloying
Abstract
Theoretical studies have shown that new physical properties such as tunable gap openings or quantum spinHall effects could be expected from group-IV graphene analogs (silicene, germanene, stanene). While therehave been numerous studies of growth of such Si, Ge, Sn monolayers, the demonstration of their hexagonalorganization has been often based on postgrowth characterization, and their analogy to graphene has remainedcontroversial. Our real-time scanning tunneling microscopy (STM) observation during Ge deposition on Ag(111)in the 380--430 K temperature range reveals that Ag atoms are involved in all the structures observed beforethe formation of a second layer, rejecting the possible formation of germanene on this substrate within theseexperimental conditions. The observation by STM of Ge atomic diffusion shows that easy exchange between Agand Ge atoms is responsible for the Ge-Ag…
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