Pressure controlled trimerization for switching of anomalous Hall effect in triangular antiferromagnet Mn$_3$Sn

TL;DR

This study combines theoretical and experimental approaches to demonstrate how pressure-induced trimerization in Mn$_3$Sn switches off the anomalous Hall effect by stabilizing a helical antiferromagnetic phase, without structural phase transition.

Contribution

It reveals the role of pressure-driven trimerization in controlling magnetic ground states and AHE in Mn$_3$Sn, providing insights for magnetic and electronic property manipulation.

Findings

AHE reduces to zero at 1.5 GPa pressure.

Pressure induces a transition from triangular to helical AFM phase.

No structural phase transition occurs during the process.

Abstract

Here, we present a detailed theoretical and experimental study on the pressure induced switching of anomalous Hall effect (AHE) in the triangular antiferromagnetic (AFM) compound Mn$_3$Sn. Our theoretical model suggests pressure driven significant splitting of the in-plane Mn bond lengths $i.e.$ an effective trimerization, which in turn stabilizes a helical AFM ground state by modifying the inter-plane exchange parameters in the system. We experimentally demonstrate that the AHE in Mn$_3$Sn reduces from 5$\mu\Omega$ cm at ambient pressure to zero at an applied pressure of about 1.5 GPa. Furthermore, our pressure dependent magnetization study reveals that the conventional triangular AFM ground state of Mn$_3$Sn systematically transforms into the helical AFM phase where the symmetry does not support a non-vanishing Berry curvature required for the realization of a finite AHE. The pressure dependent x-ray diffraction (XRD) study rules out any role of structural phase transition in the observed phenomenon. In addition, the temperature dependent in-plane lattice parameter at ambient pressure is found to deviate from the monotonic behavior when the system enters into the helical AFM phase, thereby, supporting the proposed impact of trimerization in controlling the AHE. We believe that the present study makes an important contribution towards understanding the stabilization mechanism of different magnetic ground states in Mn$_3$Sn and related materials for their potential applications pertaining to AHE switching.