Precise nanoscale temperature mapping in operational microelectronic devices by use of a phase change material
Qilong Cheng, Sukumar Rajauria, Erhard Schreck, Robert Smith, Na Wang,, Jim Reiner, Qing Dai, and David Bogy

TL;DR
This paper introduces a high-resolution, non-invasive nanoscale temperature mapping technique using a phase change material, enabling precise thermal analysis of microelectronic devices during operation.
Contribution
The authors develop a novel thermometry method based on Ge2Sb2Te5 that achieves nanoscale spatial resolution without extensive calibration or vacuum conditions.
Findings
Achieved 20 nm spatial resolution in temperature mapping.
Successfully mapped temperature contours across different device scales.
Demonstrated applicability on nanowires and micro-heaters.
Abstract
The microelectronics industry is pushing the fundamental limit on the physical size of individual elements to produce faster and more powerful integrated chips. These chips have nanoscale features that dissipate power resulting in nanoscale hotspots leading to device failures. To understand the reliability impact of the hotspots, the device needs to be tested under the actual operating conditions. Therefore, the development of high-resolution thermometry techniques is required to understand the heat dissipation processes during the device operation. Recently, several thermometry techniques have been proposed,such as radiation thermometry, thermocouple based contact thermometry, scanning thermal microscopy (SThM), scanning transmission electron microscopy (STEM) and transition based threshold thermometers. However, most of these techniques have limitations including the need for…
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Taxonomy
TopicsPhase-change materials and chalcogenides · Advanced Thermoelectric Materials and Devices · Thermal properties of materials
