Hole spin qubits in Si FinFETs with fully tunable spin-orbit coupling and sweet spots for charge noise

TL;DR

This paper theoretically demonstrates that hole spin qubits in Si FinFETs can operate at sweet spots where charge noise is eliminated, leveraging device geometry and material anisotropy for improved quantum computing performance.

Contribution

It reveals the existence of charge noise sweet spots in Si FinFET hole spin qubits without extreme electrostatic tuning, advancing scalable quantum computing design.

Findings

Sweet spots depend on crystallographic orientation.

Device geometry influences noise suppression.

Designs identified for optimal qubit performance.

Abstract

The strong spin-orbit coupling in hole spin qubits enables fast and electrically tunable gates, but at the same time enhances the susceptibility of the qubit to charge noise. Suppressing this noise is a significant challenge in semiconductor quantum computing. Here, we show theoretically that hole Si FinFETs are not only very compatible with modern CMOS technology, but they present operational sweet spots where the charge noise is completely removed. The presence of these sweet spots is a result of the interplay between the anisotropy of the material and the triangular shape of the FinFET cross-section, and it does not require an extreme fine-tuning of the electrostatics of the device. We present how the sweet spots appear in FinFETs grown along different crystallographic axes and we study in detail how the behaviour of these devices change when the cross-section area and aspect ratio are varied. We identify designs that maximize the qubit performance and could pave the way towards a scalable spin-based quantum computer.