Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions

TL;DR

This study achieved record-high tunnel magnetoresistance ratios exceeding 400% at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve magnetic tunnel junctions by optimizing growth conditions and interface tuning, demonstrating highly coherent tunneling effects.

Contribution

The paper reports the first demonstration of TMR ratios over 400% at room temperature in epitaxial Fe/MgO/Fe(001) MTJs through advanced growth and interface engineering techniques.

Findings

TMR ratio of 417% at room temperature.

Clear TMR oscillation with MgO thickness.

Observation of highly coherent tunneling features.

Abstract

Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT) and 914% at 3 K were demonstrated in epitaxial Fe/MgO/Fe(001) exchanged-biased spin-valve magnetic tunnel junctions (MTJs) by tuning growth conditions for each layer, combining sputter deposition for the Fe layers, electron-beam evaporation of the MgO barrier, and barrier interface tuning. Clear TMR oscillation as a function of the MgO thickness with a large peak-to-valley difference of ~80% was observed when the layers were grown on a highly (001)-oriented Cr buffer layer. Specific features of the observed MTJs are symmetric differential conductance (dI/dV) spectra for the bias polarity and plateau-like deep local minima in dI/dV (parallel configuration) at |V| = 0.2~0.5 V. At 3K, fine structures with two dips emerge in the plateau-like dI/dV, reflecting highly coherent tunneling through the Fe/MgO/Fe. We also observed a 496% TMR ratio at RT by a 2.24-nm-thick-CoFe insertion at the bottom-Fe/MgO interface.