Direct growth of germanene at interfaces between van der Waals materials and Ag(111)

TL;DR

This study demonstrates a simple, ambient-pressure method for growing stable, air-oxidation-resistant germanene at vdW material interfaces on Ag(111), with potential applications in future electronic devices.

Contribution

It introduces a novel, straightforward growth process for germanene at vdW interfaces without ultrahigh vacuum, using vdW caps for stability and characterization via Raman spectroscopy.

Findings

Germanene can be grown at vdW interfaces with simple annealing.

The process does not require ultrahigh vacuum conditions.

Raman spectroscopy effectively characterizes germanene at interfaces.

Abstract

Germanene, a two-dimensional honeycomb germanium crystal, is grown at graphene/Ag(111) and hexagonal boron nitride (h-BN)/Ag(111) interfaces by segregating germanium atoms. A simple annealing process in N2 or H2/Ar at ambient pressure leads to the formation of germanene, indicating that an ultrahigh-vacuum condition is not necessary. The grown germanene is stable in air and uniform over the entire area covered with a van der Waals (vdW) material. As an important finding, it is necessary to use a vdW material as a cap layer for the present germanene growth method since the use of an Al2O3 cap layer resulted in no germanene formation. The present study also proved that Raman spectroscopy in air is a powerful tool for characterizing germanene at the interfaces, which is concluded by multiple analyses including first-principles density functional theory calculations. The direct growth of h-BN-capped germanene on Ag(111), which is demonstrated in the present study, is considered to be a promising technique for the fabrication of future germanene-based electronic devices.