Ionic Charge Distributions in Silicon Atomic Wires

TL;DR

This study uses nc-AFM to investigate ionic charge distributions in silicon atomic wires, revealing new charge states and lattice distortions related to dangling bond structures on silicon surfaces.

Contribution

It introduces a detailed analysis of ionic charge distributions and lattice distortions in silicon atomic wires using advanced microscopy techniques.

Findings

Identification of previously unobserved ionic charge distributions.

Correlation between charge states and lattice distortions.

Effect of wire length and orientation on ionic surface phases.

Abstract

Using a non-contact atomic force microscope (nc-AFM), we examine continuous DB wire structures on the hydrogen-terminated silicon (100) 2x1 surface. By probing the DB structures at varying energies, we identify the formation of previously unobserved ionic charge distributions correlated to the net charge of DB wires and their predicted lattice distortion. Performing spectroscopic analysis, we identify higher energy configurations corresponding to alternative lattice distortions as well as tip-induced charging effects. By varying the length and orientation of these DB structures, we further highlight key features in the formation of these ionic surface phases.