Topological Magnetoelectric Switching on the Atomic Scale

TL;DR

This study demonstrates the first room-temperature atomic-scale magnetoelectric switching in a topological insulator, revealing potential for axion-like states and nanoscale spin control using STM techniques.

Contribution

First experimental realization of room-temperature axionic single-spin switching in MnBi2Te3 using STM-induced atomic layer removal.

Findings

Atomic-scale variations of exchange gap observed.

Reversible spin state switching with local electric field.

Topological surface magnetism persists above Nél temperature.

Abstract

Intrinsic magnetic topological insulators from MnBi2Te4 family promise realization of axion insulator, a theoretically predicted state of matter capable to mutually convert electric and magnetic signals, and whose properties are reminiscent of cosmological axion dark matter. Here we report the first experimental realization of room-temperature axionic single-spin switch in topological metamaterial MnBi2Te3. The metamaterial was in situ created in the scanning tunneling microscopy (STM) experiment by removing Te atomic layer from MnBi2Te4 surface using STM tip. Room temperature STM study of MnBi2Te3 revealed atomic scale variations of exchange gap and formation of nanoscale spin bubbles pinned at subsurface defects. We found that individual spin states in MnBi2Te3 can be reversibly switched using local electric field of STM tip with magnetoelectric response comparable to the theoretically predicted response of axion insulator. The observed topological surface magnetism develops significantly above bulk N\'eel temperature.