Non-universal Scaling of Thermoelectric Efficiency in 3D and 2D Thermoelectric Semiconductors
Kevin Octavian, Eddwi H. Hasdeo

TL;DR
This study uses first-principles calculations to analyze thermoelectric efficiency in 3D and 2D semiconductors, revealing that miniaturization does not universally enhance the figure of merit ($ZT$) and that the Hicks-Dresselhaus theory breaks down due to changes in band structure.
Contribution
The paper provides the first comprehensive first-principles comparison of thermoelectric properties in 3D and 2D semiconductors, highlighting the non-universality of $ZT$ scaling and the limitations of Hicks-Dresselhaus theory.
Findings
2D $Bi_2Te_3$ and $Bi_2Se_3$ have higher $ZT$ than bulk counterparts.
Miniaturization does not always increase $ZT$, contradicting HD theory.
Band structure changes upon dimensional reduction affect thermoelectric performance.
Abstract
We performed the first-principles calculation on common thermoelectric semiconductors , , , and in bulk three-dimension (3D) and two-dimension (2D). We found that miniaturization of materials does not generally increase the thermoelectric figure of merit () according to the Hicks and Dresselhaus (HD) theory. For example, values of 2D (0.32) and 2D (0.04) are smaller than their 3D counterparts (0.49 and 0.09, respectively). Meanwhile, the values of 2D (0.57) and 2D (0.43) are larger than the bulks (0.54 and 0.18, respectively), which agree with HD theory. The HD theory breakdown occurs because the band gap and band flatness of the materials change upon dimensional reduction. We found that flat bands give a larger electrical conductivity () and electronic thermal…
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