Efficiency Models for GaN-based Light-Emitting Diodes: Status and Challenges
Joachim Piprek
TL;DR
This paper reviews the current state of efficiency modeling for GaN-based LEDs, highlighting challenges and future directions to improve their energy efficiency across various applications.
Contribution
It provides a comprehensive overview of existing theoretical models and emphasizes the impact of material properties on LED efficiency, identifying key challenges and future research directions.
Findings
Diverse models exist for GaN-LED efficiency analysis
Material properties significantly influence LED performance
Identified key challenges for future efficiency improvements
Abstract
Light emitting diodes (LEDs) based on Gallium Nitride (GaN) have been revolutionizing various applications in lighting, displays, medical equipment, and other fields. However, their energy efficiency is still below expectations in many cases. An unprecedented diversity of theoretical models has been developed for efficiency analysis and GaN-LED design optimization. This review paper provides an overview of the modeling landscape and pays special attention to the influence of III-nitride material properties. It thereby identifies some key challenges and directions for future improvements.
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