Ferroelectric gating of the PL in MoSe2

TL;DR

This paper demonstrates a ferroelectric heterostructure using monolayer MoSe2 and CIPS, where the ferroelectric polarization modulates the electronic properties of MoSe2, showcasing a new approach for 2D material-based electronic control.

Contribution

The study introduces a novel 2D ferroelectric heterostructure with MoSe2 and CIPS, enabling electric polarization to modulate monolayer MoSe2's electronic properties.

Findings

Electric polarization in CIPS modulates MoSe2 electronic properties

Successful fabrication of MoSe2/CIPS heterostructure

Potential for 2D ferroelectric electronic devices

Abstract

We demonstrate a 2D ferroelectric heterostructure with monolayer MoSe$_2$ and CuInP$_2$S$_6$ (CIPS). In the heterostructure, the electric polarization of CIPS results in c electronic modulation in monolayer MoSe$_2$.