Effect of Ti underlayer thickness on the magnetic anisotropy of TbFe thin films

TL;DR

This paper investigates how varying the Ti underlayer thickness affects the structural and magnetic properties of TbFe thin films, revealing significant changes in coercivity and stray fields relevant for spintronics.

Contribution

It demonstrates the tunability of magnetic anisotropy and coercivity in TbFe films through controlled Ti underlayer thickness, highlighting potential for spintronics applications.

Findings

Hc increased nearly 6 times with 20 nm Ti UL

High out-of-plane coercivity with near-zero stray fields at 20 nm UL

Domain nucleation and wall motion observed in all films

Abstract

In this study, we address the impact of Ti underlayer thickness (UL: 0-40 nm) on the structural, magnetic, and microscopic properties of TbFe thin films. The structural analysis confirmed the intermixing at interfaces of the Ti and TbFe layer with the increment of UL thicknesses. Out-of-plane (OOP) coercivity (Hc), and saturation field (Hs) gradually increased with an increase in UL thickness regardless of interface mixing. For UL = 10 nm, the domain contrast and OOP stray field strength were enhanced, which may be due to the extent of d-d hybridization dominated over the influence of interfacial roughness. While for UL = 20, and 40 nm, the extent of interfacial roughness dominated the hybridization effects and as a result, stray fields deteriorated. By placing UL of 20 nm, Hc increased by nearly 6 times more than the bare TbFe system. So, we observe a state with high OOP Hc combined with nearly zero OOP stray fields that are found to co-exist in the sample. The magnetization reversal studies on a large area reveal domain nucleation followed by domain-wall motion in all the films. The idea of tuning magnetic properties by varying thicknesses of Ti UL may useful in spintronics applications.