Analytical modeling and Dynamics of Multi-Domains in Negative-Capacitance MFIS-FETs

TL;DR

This paper presents an analytical model for multi-domain dynamics in MFIS-FETs, highlighting how domain formation affects device behavior and providing design guidelines for achieving mono-domain operation.

Contribution

It introduces a new analytical model capturing multi-domain formation and switching dynamics in MFIS-FETs, aiding in device design optimization.

Findings

Optimal oxide, ferroelectric thickness, and channel length for mono-domain operation identified.

Deviation from optimal parameters causes transition to multi-domain state.

Model predicts oscillations in conduction band and electric field periodicity.

Abstract

Analytical modeling and dynamics of multidomain in metal-ferroelectric-insulator-semiconductor (MFIS)-FETs are presented in this paper. The formation of multi-domain (MD) leads to oscillations in the conduction band in the channel and periodicity in the local electric field in the ferroelectric region. The impact of 2-D local electric field on the MD switching is captured in the model using the domain wall velocity concept. The optimum values of oxide thickness, ferroelectric thickness and channel length are calculated which corresponds to mono-domain device operation. Deviation from the optimum device parameters causes the transition of mono-domain state to multi-domain state in the ferroelectric. This work can be used as a guideline for designing MFIS-NCFETs, which provides the device parameters that leads to monodomain state in the MFIS-NCFET.