Oxygen vacancy induced site-selective mott transition in lanio3
Xingyu Liao (1), Vijay Singh (1), Hyowon Park (1,2) ((1) Department of, Physics, University of Illinois at Chicago, USA (2) Materials Science, Division, Argonne National Laboratory, USA)

TL;DR
This paper investigates how oxygen vacancies induce a site-selective Mott transition in LaNiO$_{3-x}$, revealing a complex interplay between vacancy ordering, electronic correlations, and insulating states using first-principles calculations.
Contribution
It demonstrates that oxygen vacancies cause a site-selective Mott transition in LaNiO$_{3-x}$, with distinct insulating behaviors at different Ni sites, advancing understanding of defect-induced electronic correlations.
Findings
LaNiO$_{2.5}$ stabilizes a vacancy-ordered insulating structure.
The insulating phase is a site-selective Mott state with strong correlations.
The unoccupied states' peak splitting arises from two nonequivalent Ni ions.
Abstract
While defects such as oxygen vacancies in correlated materials can modify their electronic properties dramatically, understanding the microscopic origin of electronic correlations in materials with defects has been elusive. Lanthanum nickelate with oxygen vacancies, LaNiO, exhibits the metal-to-insulator transition as the oxygen vacancy level increases from the stoichiometric LaNiO. In particular, LaNiO exhibits a paramagnetic insulating phase, also stabilizing an antiferromagnetic state below K. Here, we study the electronic structure and energetics of LaNiO using first-principles. We find that LaNiO stabilizes a vacancy-ordered structure with an insulating ground state and the nature of the insulating phase is a "site-selective" paramagnetic Mott state as obtained using density functional theory plus dynamical mean field theory…
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