Light induced resistive switching in copper oxide thin films

TL;DR

This study demonstrates light-induced resistive switching in copper oxide thin films, enabling low-voltage control of memory states and potential for low-power, formation-free RRAM devices.

Contribution

It introduces a novel light-induced switching mechanism in copper oxide RRAM, reducing power consumption and eliminating the need for forming processes.

Findings

Light pulse controls resistive switching at very low voltages.

High resistance to low resistance transition is mostly irreversible.

LIS and LIR reduce device power and parameter variation.

Abstract

Copper oxide thin film based metal-insulator-metal structures were subjected to white light irradiation.The top electrodes included Al, Cr and Ni while the bottom electrode was either Au or Pt. A white light pulse controls the set process and this light induced set (LIS) can be performed at very low voltages (tens of milli volts) which is not possible in the normal set process. The LIS is initiated at the positive edge of the pulse and there is no effect of the falling edge of the light. In most cases the high resistance state (HRS) to low resistance state (LRS) transition is irreversible i.e.the devices continue to remain in the LRS even after the light pulse is switched off. Light induced reset (LIR) is achieved in only one device structure Al/CuxO/Au. By using LIS and LIR, set and reset power of the device can be reduced to a great extent and the set and reset parameters variation also reduces. The current work, thus, points to the possibility of formation and compliance-free resistive random access memory devices.